| BSL211SP
PDF资料 |
BSL211SP
技术资料 |
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| 厂家:Infineon Technologies AG |
| 网址:
http://www.infineon.com/
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| 页数:8 页 |
| 大小:77 K |
| 说明:OptiMOS -P Small-Signal-Transistor |
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BSL307SP
技术资料 |
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| 厂家:Infineon Technologies AG |
| 网址:
http://www.infineon.com/
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| 页数:8 页 |
| 大小:80 K |
| 说明:OptiMOS -P Small-Signal-Transistor |
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BSLGH
技术资料 |
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| 网址:
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| 页数:0 页 |
| 大小:31 K |
| 说明:SIDE LEVER GUN+TUBE&CONNECTOR
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BSM05GD100D
技术资料 |
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| 网址:
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| 页数:0 页 |
| 大小:74 K |
| 说明:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 5A I(C)
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BSM100GAL100D
技术资料 |
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| 网址:
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| 页数:0 页 |
| 大小:347 K |
| 说明:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 100A I(C)
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BSM100GAL120DN2
技术资料 |
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| 厂家:Siemens Semiconductor Group |
| 网址:
http://www.infineon.com/
|
| 页数:5 页 |
| 大小:83 K |
| 说明:IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
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BSM100GB100D
技术资料 |
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| 网址:
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| 页数:0 页 |
| 大小:347 K |
| 说明:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 100A I(C)
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BSM100GB120D
技术资料 |
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| 网址:
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| 页数:0 页 |
| 大小:356 K |
| 说明:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C)
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BSM100GB120DLC
技术资料 |
|
| 厂家:eupec GmbH |
| 网址:
http://www.eupec.com
|
| 页数:8 页 |
| 大小:89 K |
| 说明:IGBT-Modules |
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BSM100GB120DLCK
技术资料 |
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| 网址:
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| 页数:0 页 |
| 大小:4 K |
| 说明:IGBT Module
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BSM100GB120DLCK
技术资料 |
|
| 厂家:eupec GmbH |
| 网址:
http://www.eupec.com
|
| 页数:8 页 |
| 大小:89 K |
| 说明:IGBT-Modules |
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BSM100GB120DN2
技术资料 |
|
| 厂家:Siemens Semiconductor Group |
| 网址:
http://www.infineon.com/
|
| 页数:9 页 |
| 大小:135 K |
| 说明:IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
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BSM100GB120DN2K
技术资料 |
|
| 厂家:Siemens Semiconductor Group |
| 网址:
http://www.infineon.com/
|
| 页数:9 页 |
| 大小:116 K |
| 说明:IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
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BSM100GB160D
技术资料 |
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| 网址:
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| 页数:0 页 |
| 大小:299 K |
| 说明:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.6KV V(BR)CES | 135A I(C)
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BSM100GB170DLC
技术资料 |
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| 网址:
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| 页数:0 页 |
| 大小:83 K |
| 说明:IGBT Module
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BSM100GB170DN2
技术资料 |
|
| 厂家:Siemens Semiconductor Group |
| 网址:
http://www.infineon.com/
|
| 页数:9 页 |
| 大小:134 K |
| 说明:IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
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